Filtry
Filtry
Dyskretne produkty półprzewodnikowe
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
|
APT50GF60JU3 |
MODUŁ IGBT 600V 75A 277W SOT227
|
Firma Mikrosemi
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FF450R17ME4B11BOSA1 |
IGBT MOD 1700 V 600 A 2500 W
|
Technologie Infineon
|
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FS50R07E4BPSA1 |
MODUŁ IGBT 650V 75A 230W
|
Technologie Infineon
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APTGF300DA120G |
MODUŁ IGBT 1200V 400A 1780W SP6
|
Firma Mikrosemi
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MG75U12MRGJ |
Tranzystory - IGBT - Moduły GJ
|
Technologia Yangjie
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FZ1600R17HP4B21BOSA2 |
MODUŁ IGBT 1700V 1600A
|
Technologie Infineon
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VS-GA200SA60UP |
IGBT MOD 600 V 200 A 500 W SOT227
|
Vishay General Semiconductor - Diody
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FP40R12KT3BOSA1 |
IGBT MOD 1200 V 55 A 210 W
|
Technologie Infineon
|
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MG100HF12LEC1 |
Tranzystory - IGBT - Moduły C1
|
Technologia Yangjie
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FP200R12N3T7B11BPSA1 |
NISKA MOC EKONOMICZNA
|
Technologie Infineon
|
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F4100R17N3E4BPSA1 |
NISKA MOC EKONOMICZNA
|
Technologie Infineon
|
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FZ1800R45HL4BPSA1 |
IHV IHM T XHP 3 3-6 5K AG-IHVB19
|
Technologie Infineon
|
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FS660R08A6P2FBBPSA1 |
NAPĘD HYBRYDOWY
|
Technologie Infineon
|
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FS35R12KT3BOSA1 |
IGBT MOD 1200 V 55 A 210 W
|
Technologie Infineon
|
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VS-GT80DA120U |
IGBT MOD 1200 V 139 A 658 W SOT227
|
Vishay General Semiconductor - Diody
|
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IFF450B12ME4PB11BPSA1 |
IGBT MOD 1200 V 450 A 40 W
|
Technologie Infineon
|
|
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|
6PS04512E43W39693NOSA1 |
MODUŁ IGBT 500V 300A
|
Technologie Infineon
|
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FS450R12OE4B81BPSA1 |
ŚREDNIA MOC EKONOMICZNA
|
Technologie Infineon
|
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FF1500R12IE5PBPSA1 |
IGBT MOD 1200V 1500A AGPRIME3+-5
|
Technologie Infineon
|
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FP75R12N2T7PB11BPSA1 |
NISKA MOC EKONOMICZNA
|
Technologie Infineon
|
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FF100R12KS4HOSA1 |
IGBT MOD 1200 V 150 A 780 W
|
Technologie Infineon
|
|
|
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|
MG1275S-BA1MM |
MODUŁ IGBT 1200V 105A 630W S3
|
Firma Littelfuse Inc.
|
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FB30R06W1E3BOMA1 |
MODUŁ IGBT 600V 39A 115W
|
Technologie Infineon
|
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FF150R12KS4HOSA1 |
IGBT MOD 1200 V 225 A 1250 W
|
Technologie Infineon
|
|
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FD16001200R17HP4B2BOSA2 |
MODUŁ IGBT VCES 1700V 1600A
|
Technologie Infineon
|
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APTGL240TL120G |
MODUŁ IGBT 1200V 305A 1000W SP6
|
Technologia mikroczipu
|
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DF300R12KE3HOSA1 |
IGBT MOD 1200 V 480 A 1470 W
|
Technologie Infineon
|
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NXH350N100H4Q2F2S1G |
MODUŁ IC PWR 1000V 350A PIM42
|
ONSEM
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FZ1200R12HE4PHPSA1 |
MODUŁ IGBT 1200V 1825A
|
Technologie Infineon
|
|
|
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|
VS-ENQ030L120S |
IGBT MOD 1200V 61A EMIPAK-1B
|
Vishay General Semiconductor - Diody
|
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|
APT40GF120JRDQ2 |
IGBT MOD 1200V 77A 347W ISOTOP
|
Technologia mikroczipu
|
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|
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|
APTGF300A120D3G |
MODUŁ IGBT 1200V 420A 2100W D3
|
Firma Mikrosemi
|
|
|
|
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|
MG150HF12LEC2 |
Tranzystory - IGBT - Moduły C2
|
Technologia Yangjie
|
|
|
|
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APT25GF120JCU2 |
IGBT MOD 1200 V 45 A 227 W SOT227
|
Firma Mikrosemi
|
|
|
|
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|
FS100R07N2E4B11BOSA1 |
IGBT MOD 650 V 125 A 20 MW
|
Technologie Infineon
|
|
|
|
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|
DDB6U134N16RRBOSA1 |
IGBT MOD 1600 V 70 A 500 W
|
Technologie Infineon
|
|
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APT100GT120JU2 |
IGBT MOD 1200 V 140 A 480 W SOT227
|
Technologia mikroczipu
|
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APT40GP90J |
MODUŁ IGBT 900V 68A 284W ISOTOP
|
Technologia mikroczipu
|
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FP150R07N3E4B11BOSA1 |
IGBT MOD 650 V 150 A 430 W
|
Technologie Infineon
|
|
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FD150R12RT4HOSA1 |
IGBT MOD 1200 V 150 A 790 W
|
Technologie Infineon
|
|
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F3L75R12W1H3B11BPSA1 |
IGBT MOD 1200 V 45 A 275 W
|
Technologie Infineon
|
|
|
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FZ3600R17HE4PHPSA1 |
MODUŁ IGBT 1700V 7200A
|
Technologie Infineon
|
|
|
|
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APTGT300DU170G |
MODUŁ IGBT 1700V 400A 1660W SP6
|
Technologia mikroczipu
|
|
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APTGT50H60RT3G |
MODUŁ IGBT 600V 80A 176W SP3
|
Technologia mikroczipu
|
|
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|
CM200DY-12H |
IGBT MOD 600 V 200 A 780 W
|
Powerex Inc.
|
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FS450R17OE4PBOSA1 |
IGBT MOD 1700V 900A 20MW
|
Technologie Infineon
|
|
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|
CM300DY-12H |
IGBT MOD 600 V 300 A 1100 W
|
Powerex Inc.
|
|
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APTGF25H120T1G |
MODUŁ IGBT 1200V 40A 208W SP1
|
Technologia mikroczipu
|
|
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|
VS-GT200TS065N |
MODUŁY IGBT - IAP IGBT
|
Vishay General Semiconductor - Diody
|
|
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|
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|
FMG1G75US60H |
MODUŁ IGBT 600V 75A 310W 7PMGA
|
ONSEM
|
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