Filtry
Filtry
Dyskretne produkty półprzewodnikowe
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
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VS-GB100DA60UP |
IGBT MOD 600 V 125 A 447 W SOT227
|
Vishay General Semiconductor - Diody
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DDB6U30N08VRBOMA1 |
IGBT MOD 600 V 26 A 83,5 W
|
Technologie Infineon
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FS50R06YE3BOMA1 |
MODUŁ IGBT 600V 60A 160W
|
Technologie Infineon
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VS-GT105LA120UX |
IGBT MOD 1200 V 134 A 463 W SOT227
|
Vishay General Semiconductor - Diody
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FS100R12KS4BOSA1 |
IGBT MOD 1200 V 130 A 660 W
|
Technologie Infineon
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FF300R12ME4PB11BPSA1 |
IGBT MOD 1200 V 600 A 20 MW
|
Technologie Infineon
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MG0675S-BN4MM |
MODUŁ IGBT 600V 75A 250W S3
|
Firma Littelfuse Inc.
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DDB6U100N16RRBOSA1 |
IGBT MOD 1200 V 50 A 350 W
|
Technologie Infineon
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FS300R17OE4B81BPSA1 |
ŚREDNIA MOC EKONOMICZNA
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Technologie Infineon
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CM200DX-24S |
IGBT MOD 1200 V 200 A 1500 W
|
Powerex Inc.
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DDB6U75N16W1RBOMA1 |
IGBT MOD 1200 V 69 A 335 W
|
Technologie Infineon
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FS75R12W2T7BPSA1 |
NISKA MOC EASY AG-EASY2B-711
|
Technologie Infineon
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FF300R17ME4BOSA1 |
IGBT MOD 1700 V 375 A 1800 W
|
Technologie Infineon
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2PS12017E44G35911NOSA1 |
MODUŁ IGBT 690V 574A 2160W
|
Technologie Infineon
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MG200HF12MRC2 |
Tranzystory - IGBT - Moduły C2
|
Technologia Yangjie
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FP25R12KT4BPSA1 |
NISKA MOC ECONO AG-ECONO2B-411
|
Technologie Infineon
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FP15R12KT3BPSA1 |
NISKA MOC ECONO AG-ECONO2C-311
|
Technologie Infineon
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IFF300B17N2E4PB11BPSA1 |
IGBT MOD 1700 V 400 A 1500 W
|
Technologie Infineon
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FP35R12KT4BOSA1 |
IGBT MOD 1200 V 35 A 210 W
|
Technologie Infineon
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APTCV60HM45BC20T3G |
MODUŁ IGBT 600V 50A 250W SP3
|
Technologia mikroczipu
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FS25R12W1T4BOMA1 |
IGBT MOD 1200 V 45 A 205 W
|
Technologie Infineon
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FF650R17IE4DB2BOSA1 |
MODUŁ IGBT 1700V 4150W
|
Technologie Infineon
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F1235R12KT4GBOSA1 |
IGBT MOD 1200 V 35 A 210 W
|
Technologie Infineon
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FP200R12N3T7BPSA1 |
NISKA MOC ECONO AG-ECONO3-3
|
Technologie Infineon
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P3000ZL45X168HPSA1 |
PAKIET PRASOWY IGBT
|
Technologie Infineon
|
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FS800R07A2E3B31BOSA1 |
Moduły IGBT
|
Technologie Infineon
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FS50R12W2T4B11BOMA1 |
IGBT MOD 1200 V 83 A 335 W
|
Technologie Infineon
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FP15R12KT3BOSA1 |
IGBT MOD 1200 V 18 A 83,5 W
|
Technologie Infineon
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FP75R07N2E4BOSA1 |
MODUŁ IGBT 650V 95A
|
Technologie Infineon
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MG25P12E1A |
Tranzystory - IGBT - Moduły E1
|
Technologia Yangjie
|
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FMG2G100US60 |
MODUŁ IGBT 600V 100A 400W 7PMGA
|
ONSEM
|
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F4150R06KL4BOSA1 |
IGBT MOD 600 V 180 A 570 W
|
Technologie Infineon
|
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FS50R06YL4BOMA1 |
MODUŁ IGBT 600V 55A 202W
|
Technologie Infineon
|
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APTCV60HM45BT3G |
MODUŁ IGBT 600V 50A 250W SP3
|
Technologia mikroczipu
|
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FS200R12W3T7B11BPSA1 |
NISKA MOC EASY AG-EASY3B-1
|
Technologie Infineon
|
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FPF2G120BF07AS |
MODUŁ IGBT 650V 40A 156W F2
|
ONSEM
|
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FD800R45KL3KB5NPSA1 |
IGBT MOD 4500 V 800 A 9000 W
|
Technologie Infineon
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FF225R12MS4BOSA1 |
IGBT MOD 1200 V 275 A 1450 W
|
Technologie Infineon
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FZ2400R17HE4PB9HPSA1 |
MODUŁ IGBT 1700V 2400A
|
Technologie Infineon
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FS75R12KE3B9BOSA1 |
IGBT MOD 1200 V 105 A 355 W
|
Technologie Infineon
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APT100GT60JR |
IGBT MOD 600V 148A 500W ISOTOP
|
Technologia mikroczipu
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APTGL475U120DAG |
MODUŁ IGBT 1200V 610A 2307W SP6
|
Technologia mikroczipu
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FZ400R12KS4PHOSA1 |
MODUŁ IGBT 1200V 800A
|
Technologie Infineon
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F4200R17N3E4B58BPSA1 |
NISKA MOC ECONO AG-ECONO3B-411
|
Technologie Infineon
|
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APTGT75DA120TG |
MODUŁ IGBT 1200V 110A 357W SP4
|
Technologia mikroczipu
|
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APT70GR120JD60 |
IGBT MOD 1200 V 112 A 543 W SOT227
|
Technologia mikroczipu
|
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|
FP100R06KE3_B16 |
MOD IGBT FP100R06KE3B16BOSA1
|
Technologie Infineon
|
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FF300R17KE4HOSA1 |
IGBT MOD 1700 V 440 A 1800 W
|
Technologie Infineon
|
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VS-CPV362M4FPBF |
MODUŁ IGBT 600V 8,8A 23W IMS-2
|
Vishay General Semiconductor - Diody
|
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FF200R12KE4HOSA1 |
IGBT MOD 1200 V 240 A 1100 W
|
Technologie Infineon
|
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