Filtry
Filtry
Tranzystory
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
|
F1235R12KT4GBOSA1 |
IGBT MOD 1200 V 35 A 210 W
|
Technologie Infineon
|
|
|
|
|
|
FP200R12N3T7BPSA1 |
NISKA MOC ECONO AG-ECONO3-3
|
Technologie Infineon
|
|
|
|
|
|
P3000ZL45X168HPSA1 |
PAKIET PRASOWY IGBT
|
Technologie Infineon
|
|
|
|
|
|
FS800R07A2E3B31BOSA1 |
Moduły IGBT
|
Technologie Infineon
|
|
|
|
|
|
FS50R12W2T4B11BOMA1 |
IGBT MOD 1200 V 83 A 335 W
|
Technologie Infineon
|
|
|
|
|
|
FP15R12KT3BOSA1 |
IGBT MOD 1200 V 18 A 83,5 W
|
Technologie Infineon
|
|
|
|
|
|
FP75R07N2E4BOSA1 |
MODUŁ IGBT 650V 95A
|
Technologie Infineon
|
|
|
|
|
|
MG25P12E1A |
Tranzystory - IGBT - Moduły E1
|
Technologia Yangjie
|
|
|
|
|
|
FMG2G100US60 |
MODUŁ IGBT 600V 100A 400W 7PMGA
|
ONSEM
|
|
|
|
|
|
F4150R06KL4BOSA1 |
IGBT MOD 600 V 180 A 570 W
|
Technologie Infineon
|
|
|
|
|
|
FS50R06YL4BOMA1 |
MODUŁ IGBT 600V 55A 202W
|
Technologie Infineon
|
|
|
|
|
|
APTCV60HM45BT3G |
MODUŁ IGBT 600V 50A 250W SP3
|
Technologia mikroczipu
|
|
|
|
|
|
FS200R12W3T7B11BPSA1 |
NISKA MOC EASY AG-EASY3B-1
|
Technologie Infineon
|
|
|
|
|
|
FPF2G120BF07AS |
MODUŁ IGBT 650V 40A 156W F2
|
ONSEM
|
|
|
|
|
|
FD800R45KL3KB5NPSA1 |
IGBT MOD 4500 V 800 A 9000 W
|
Technologie Infineon
|
|
|
|
|
|
FF225R12MS4BOSA1 |
IGBT MOD 1200 V 275 A 1450 W
|
Technologie Infineon
|
|
|
|
|
|
FZ2400R17HE4PB9HPSA1 |
MODUŁ IGBT 1700V 2400A
|
Technologie Infineon
|
|
|
|
|
|
FS75R12KE3B9BOSA1 |
IGBT MOD 1200 V 105 A 355 W
|
Technologie Infineon
|
|
|
|
|
|
APT100GT60JR |
IGBT MOD 600V 148A 500W ISOTOP
|
Technologia mikroczipu
|
|
|
|
|
|
APTGL475U120DAG |
MODUŁ IGBT 1200V 610A 2307W SP6
|
Technologia mikroczipu
|
|
|
|
|
|
FZ400R12KS4PHOSA1 |
MODUŁ IGBT 1200V 800A
|
Technologie Infineon
|
|
|
|
|
|
F4200R17N3E4B58BPSA1 |
NISKA MOC ECONO AG-ECONO3B-411
|
Technologie Infineon
|
|
|
|
|
|
APTGT75DA120TG |
MODUŁ IGBT 1200V 110A 357W SP4
|
Technologia mikroczipu
|
|
|
|
|
|
APT70GR120JD60 |
IGBT MOD 1200 V 112 A 543 W SOT227
|
Technologia mikroczipu
|
|
|
|
|
|
FP100R06KE3_B16 |
MOD IGBT FP100R06KE3B16BOSA1
|
Technologie Infineon
|
|
|
|
|
|
FF300R17KE4HOSA1 |
IGBT MOD 1700 V 440 A 1800 W
|
Technologie Infineon
|
|
|
|
|
|
VS-CPV362M4FPBF |
MODUŁ IGBT 600V 8,8A 23W IMS-2
|
Vishay General Semiconductor - Diody
|
|
|
|
|
|
FF200R12KE4HOSA1 |
IGBT MOD 1200 V 240 A 1100 W
|
Technologie Infineon
|
|
|
|
|
|
APT50GF60JU3 |
MODUŁ IGBT 600V 75A 277W SOT227
|
Firma Mikrosemi
|
|
|
|
|
|
FF450R17ME4B11BOSA1 |
IGBT MOD 1700 V 600 A 2500 W
|
Technologie Infineon
|
|
|
|
|
|
FS50R07E4BPSA1 |
MODUŁ IGBT 650V 75A 230W
|
Technologie Infineon
|
|
|
|
|
|
APTGF300DA120G |
MODUŁ IGBT 1200V 400A 1780W SP6
|
Firma Mikrosemi
|
|
|
|
|
|
MG75U12MRGJ |
Tranzystory - IGBT - Moduły GJ
|
Technologia Yangjie
|
|
|
|
|
|
FZ1600R17HP4B21BOSA2 |
MODUŁ IGBT 1700V 1600A
|
Technologie Infineon
|
|
|
|
|
|
VS-GA200SA60UP |
IGBT MOD 600 V 200 A 500 W SOT227
|
Vishay General Semiconductor - Diody
|
|
|
|
|
|
FP40R12KT3BOSA1 |
IGBT MOD 1200 V 55 A 210 W
|
Technologie Infineon
|
|
|
|
|
|
MG100HF12LEC1 |
Tranzystory - IGBT - Moduły C1
|
Technologia Yangjie
|
|
|
|
|
|
FP200R12N3T7B11BPSA1 |
NISKA MOC EKONOMICZNA
|
Technologie Infineon
|
|
|
|
|
|
F4100R17N3E4BPSA1 |
NISKA MOC EKONOMICZNA
|
Technologie Infineon
|
|
|
|
|
|
FZ1800R45HL4BPSA1 |
IHV IHM T XHP 3 3-6 5K AG-IHVB19
|
Technologie Infineon
|
|
|
|
|
|
FS660R08A6P2FBBPSA1 |
NAPĘD HYBRYDOWY
|
Technologie Infineon
|
|
|
|
|
|
FS35R12KT3BOSA1 |
IGBT MOD 1200 V 55 A 210 W
|
Technologie Infineon
|
|
|
|
|
|
VS-GT80DA120U |
IGBT MOD 1200 V 139 A 658 W SOT227
|
Vishay General Semiconductor - Diody
|
|
|
|
|
|
IFF450B12ME4PB11BPSA1 |
IGBT MOD 1200 V 450 A 40 W
|
Technologie Infineon
|
|
|
|
|
|
6PS04512E43W39693NOSA1 |
MODUŁ IGBT 500V 300A
|
Technologie Infineon
|
|
|
|
|
|
FS450R12OE4B81BPSA1 |
ŚREDNIA MOC EKONOMICZNA
|
Technologie Infineon
|
|
|
|
|
|
FF1500R12IE5PBPSA1 |
IGBT MOD 1200V 1500A AGPRIME3+-5
|
Technologie Infineon
|
|
|
|
|
|
FP75R12N2T7PB11BPSA1 |
NISKA MOC EKONOMICZNA
|
Technologie Infineon
|
|
|
|
|
|
FF100R12KS4HOSA1 |
IGBT MOD 1200 V 150 A 780 W
|
Technologie Infineon
|
|
|
|
|
|
MG1275S-BA1MM |
MODUŁ IGBT 1200V 105A 630W S3
|
Firma Littelfuse Inc.
|
|
|