Filtry
Filtry
Dyskretne produkty półprzewodnikowe
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
|
MG300HF12TLC2 |
Tranzystory - IGBT - Moduły C2
|
Technologia Yangjie
|
|
|
|
|
|
FS150R12PT4BOSA1 |
IGBT MOD 1200 V 200 A 680 W
|
Technologie Infineon
|
|
|
|
|
|
/APTGT75TA120PG |
MODUŁ IGBT 1200V 100A 350W SP6P
|
Technologia mikroczipu
|
|
|
|
|
|
FP75R12KT4PB11BPSA1 |
IGBT MOD 1200 V 150 A 20 MW
|
Technologie Infineon
|
|
|
|
|
|
FP7G50US60 |
MODUŁ IGBT 600V 50A 250W EPM7
|
ONSEM
|
|
|
|
|
|
FZ900R12KP4HOSA1 |
MODUŁ IGBT 1200V 900A
|
Technologie Infineon
|
|
|
|
|
|
APT50GF120JRD |
IGBT NPT COMBI 1200V 50A ISOTOP
|
Technologia mikroczipu
|
|
|
|
|
|
FF300R17ME4B11BOSA1 |
IGBT MOD 1700 V 375 A 1800 W
|
Technologie Infineon
|
|
|
|
|
|
FS25R12KT3BOSA1 |
IGBT MOD 1200 V 40 A 145 W
|
Technologie Infineon
|
|
|
|
|
|
STGE200N60K |
MODUŁ IGBT 600V 150A ISOTOP
|
STMikroelektronika
|
|
|
|
|
|
VS-CPV362M4UPBF |
MODUŁ IGBT 600V 7,2A 23W IMS-2
|
Vishay General Semiconductor - Diody
|
|
|
|
|
|
BSM200GB60DLCHOSA1 |
IGBT MOD 600 V 230 A 730 W
|
Technologie Infineon
|
|
|
|
|
|
FP15R12W1T7PB11BPSA1 |
NISKA MOC EASY AG-EASY1B-2
|
Technologie Infineon
|
|
|
|
|
|
FF1200R17KE3NOSA1 |
MODUŁ IGBT VCES 1700V 1200A
|
Technologie Infineon
|
|
|
|
|
|
FF150R12KT3GHOSA1 |
IGBT MOD 1200 V 225 A 780 W
|
Technologie Infineon
|
|
|
|
|
|
2LS20017E42W36702NOSA1 |
MODUŁ IGBT 1700V 20A
|
Technologie Infineon
|
|
|
|
|
|
APT100GT120JR |
IGBT MOD 1200V 123A 570W ISOTOP
|
Technologia mikroczipu
|
|
|
|
|
|
FS100R17N3E4BOSA1 |
IGBT MOD 1700 V 100 A 600 W
|
Technologie Infineon
|
|
|
|
|
|
MG10P12P2 |
Tranzystory - IGBT - Moduły P2
|
Technologia Yangjie
|
|
|
|
|
|
APTGV50H120T3G |
MODUŁ IGBT 1200V 75A 270W SP3
|
Firma Mikrosemi
|
|
|
|
|
|
APT50GR120JD30 |
IGBT MOD 1200V 84A 417W SOT227
|
Technologia mikroczipu
|
|
|
|
|
|
APT50GP60JDQ2 |
IGBT MOD 600V 100A 329W ISOTOP
|
Technologia mikroczipu
|
|
|