Filtry
Filtry
Dyskretne produkty półprzewodnikowe
| Obraz | część # | Opis | producent | Akcje | RFQ | |
|---|---|---|---|---|---|---|
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APTGT50H60T3G |
MODUŁ IGBT 600V 80A 176W SP3
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Technologia mikroczipu
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FP50R06KE3BOSA1 |
MODUŁ IGBT 600V 60A 190W
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Technologie Infineon
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FB20R06W1E3BOMA1 |
MODUŁ IGBT 600V 29A 94W
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Technologie Infineon
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Wymagania w zakresie ochrony środowiska |
MODUŁ IGBT 1400W MED PWR 62MM-2
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Technologie Infineon
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FF300R12KT3EHOSA1 |
IGBT MOD 1200 V 480 A 1450 W
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Technologie Infineon
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APTGT600SK60G |
MODUŁ IGBT 600V 700A 2300W SP6
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Technologia mikroczipu
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FS225R12OE4BOSA1 |
IGBT MOD 1200 V 350 A 1250 W
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Technologie Infineon
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FP40R12KT3BPSA1 |
NISKA MOC EKONOMICZNA
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Technologie Infineon
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FZ1200R12HP4HOSA2 |
IGBT MOD 1200 V 1790 A 7150 W
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Technologie Infineon
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FF300R07ME4B11BPSA1 |
ŚREDNIA MOC EKONOMICZNA
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Technologie Infineon
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VS-40MT120PHAPBF |
MTP - PÓŁmostek IGBT
|
Vishay General Semiconductor - Diody
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FS400R12A2T4IBPSA1 |
IGBT MOD 1200 V 400 A 1500 W
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Technologie Infineon
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CM450DY-24S |
IGBT MOD 1200 V 410 A 3330 W
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Powerex Inc.
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F3L300R12PT4PB26BOSA1 |
MODUŁ IGBT MED POWER ECONO4-1
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Technologie Infineon
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APT35GP120J |
IGBT MOD 1200V 64A 284W ISOTOP
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Technologia mikroczipu
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APTGT75H60T2G |
MODUŁ IGBT 600V 100A 250W SP2
|
Firma Mikrosemi
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CPV364M4F |
MODUŁ IGBT 600V 27A 63W IMS-2
|
Vishay General Semiconductor - Diody
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FF500R17KE4BOSA1 |
MODUŁ IGBT 1700V 500A
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Technologie Infineon
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F3L15R12W2H3B27BOMA1 |
IGBT MOD 1200 V 20 A 145 W
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Technologie Infineon
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FP50R12N2T7B11BPSA1 |
NISKA MOC ECONO AG-ECONO2B-711
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Technologie Infineon
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F475R12KS4BOSA1 |
IGBT MOD 1200 V 100 A 500 W
|
Technologie Infineon
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FMG1G50US60H |
MODUŁ IGBT 600V 50A 250W 7PMGA
|
ONSEM
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STG3P2M10N60B |
IGBT MOD 600V 19A 56W SEMITOP2
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STMikroelektronika
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APT45GP120JDQ2 |
IGBT MOD 1200V 75A 329W ISOTOP
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Technologia mikroczipu
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FF600R12ME4BOSA1 |
MODUŁ IGBT 1200V 4050W
|
Technologie Infineon
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FF600R12ME4B11BPSA1 |
MODUŁ IGBT 1200V 4050W
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Technologie Infineon
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FS75R12W2T4B11BOMA1 |
IGBT MOD 1200 V 107 A 375 W
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Technologie Infineon
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FP100R07N3E4B11BOSA1 |
IGBT MOD 650 V 100 A 335 W
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Technologie Infineon
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APTGT100DU170TG |
MODUŁ IGBT 1700V 150A 560W SP4
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Technologia mikroczipu
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FF450R07ME4BOSA1 |
MODUŁ GBT 650V 450A
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Technologie Infineon
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FS150R12N2T7B54BPSA1 |
NISKA MOC EKONOMICZNA
|
Technologie Infineon
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FF300R12ME3BOSA1 |
IGBT MOD 1200 V 500 A 1450 W
|
Technologie Infineon
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FS75R07U1E4BPSA |
IGBT MOD 650 V 100 A 275 W
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Technologie Infineon
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MG600Q2YS60A |
IGBT MOD 1200 V 600 A 4300 W
|
Powerex Inc.
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FF600R12IP4VBOSA1 |
IGBT MOD 1200 V 600 A 3350 W
|
Technologie Infineon
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FZ800R33KL2CB5NOSA1 |
IGBT MOD 3300 V 1500 A 9800 W
|
Technologie Infineon
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MG100HF12TLC1 |
Tranzystory - IGBT - Moduły C1
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Technologia Yangjie
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DDB6U104N16RRBPSA1 |
NISKA MOC ECONO AG-ECONO2B-211
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Technologie Infineon
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CM150RX-24S1 |
IGBT MOD 1200 V 150 A 935 W
|
Powerex Inc.
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FP50R12KE3BOSA1 |
IGBT MOD 1200 V 75 A 280 W
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Technologie Infineon
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APTGF50X60T3G |
MODUŁ IGBT 600V 65A 250W SP3
|
Firma Mikrosemi
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FS75R12KS4BOSA1 |
IGBT MOD 1200 V 100 A 500 W
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Technologie Infineon
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A1P35S12M3-F |
IGBT MOD 1200 V 35 A 250 W ACEPACK1
|
STMikroelektronika
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FZ1200R17HP4HOSA2 |
IGBT MOD 1700 V 1200 A 7800 W
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Technologie Infineon
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FF1000R17IE4PBOSA1 |
MODUŁ IGBT 1700V 1000A
|
Technologie Infineon
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VS-GT90DA120U |
SOT-227 - PRZEŁĄCZNIK POJEDYNCZY IGBT + A
|
Vishay General Semiconductor - Diody
|
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FS200R12KT4RB11BOSA1 |
IGBT MOD 1200 V 280 A 1000 W
|
Technologie Infineon
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6PS18012E4FG38393NWSA1 |
MODUŁ IGBT STOS 1200 V A-PSF-1
|
Technologie Infineon
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MG25P12P3 |
Tranzystory - IGBT - Moduły P3
|
Technologia Yangjie
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NXH450B100H4Q2F2SG |
1000 V, 75 A FSIII IGBT, ŚREDNIA PRĘDKOŚĆ
|
ONSEM
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